Lasing in Group-IV Materials

Fluorene‐containing tetraphenylethylene molecules as lasing materials

A series of star-shaped oligofluorene molecules, each containing a TPE core, have been specifically designed and produced to show effective aggregation-induced emission (AIE). Each molecule differs either in the number of fluorene units within the arms (e.g., 1 or 4, compounds 4 and 5), or the terminal group positioned at the end of each arm (e.g., H, TMS, or TPA, compounds 4, 6, and 7). Althou...

Optical gain in DNA-DCM for lasing in photonic materials.

We present a detailed study of the gain length in an active medium obtained by doping of DNA strands with 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran dye molecules. The superior thermal stability of the composite and its low quenching permit one to obtain an optical gain coefficient larger than 300 cm(-1). We also demonstrate that such an active material is feasible for the...

3D continuum phonon model for group-IV 2D materials

A general three-dimensional continuum model of phonons in two-dimensional materials is developed. Our first-principles derivation includes full consideration of the lattice anisotropy and flexural modes perpendicular to the layers and can thus be applied to any two-dimensional material. In this paper, we use the model to not only compare the phonon spectra among the group-IV materials but also ...

Group IV Materials for Low Cost and High Performance Bolometers

Nanomembrane-based materials for Group IV semiconductor quantum electronics

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the e...